UHV PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD)INTRODUCTORY PRINCIPLE Plasma Enhanced Atomic Layer Deposition (PEALD) is a deposition technique used for producing high quality epitaxial (atomic la
UHV ION-BEAM SPUTTER DEPOSITION (IBSD)INTRODUCTORY PRINCIPLEIon-Beam Sputter Deposition (IBSD) is a thin-layer deposition method in which the mechanism of ion production is separate from the target. T
UHV ELECTRON BEAM EVAPORATOR (EBE)INTRODUCTORY PRINCIPLE In Electron Beam Evaporator (EBE), high-energy electron beam is generated from tungsten filament, while electric and magnetic field direct thes
UHV MAGNETRON SPUTTERING SYSTEM (MDS)INTRODUCTORY PRINCIPLE In Magnetron Sputtering Deposition (MDS) the coating/target material are placed on a magnetron cathode. The chamber is evacuated at ultrahig
UHV PULSED LASER DEPOSITION - LASER MBE (PLD)INTRODUCTORY PRINCIPLEIn Pulsed-Laser Deposition (PLD) or Laser MBE, high power pulsed laser beam is focused on the surface of the target. When the laser p
UHV MOLECULAR BEAM EPITAXY (MBE)INTRODUCTORY PRINCIPLEMolecular Beam Epitaxy (MBE) is an ultrahigh vacuum (UHV) deposition technique used for producing high quality epitaxial (atomic layer) thin film
